silicon N channel IGBT 360V
부품명(s) : MG25Q2YS40
Toshiba
상세내역 : GTR MODULE silicon N channel IGBT
부품명(s) : MG300J2YS40
Toshiba
상세내역 : silicon N channel IGBT
부품명(s) : MG25Q6ES42
Toshiba
상세내역 : GTR MODULE silicon N channel IGBT
부품명(s) : MG100Q2YS11
Toshiba
상세내역 : GTR Module silicon N-channel IGBT
부품명(s) : MG75Q2YS52
Toshiba
상세내역 : TOSHIBA GTR MODULE silicon N channel IGBT
부품명(s) : MG300Q1US51
Toshiba
상세내역 : TOSHIBA GTR MODULE silicon N channel IGBT
부품명(s) : MG600J1US51 MG600
Toshiba
상세내역 : TOSHIBA GTR MODULE silicon N channel IGBT
부품명(s) : MG25J1BS11
Toshiba
상세내역 : GTR MODULE silicon N - channel IGBT
부품명(s) : MG300J1US51
Toshiba
상세내역 : TOSHIBA GTR MODULE silicon N channel IGBT
부품명(s) : MG300Q1US11
Toshiba
상세내역 : INSULATED GATE BIPOLAR TRANSISTOR
부품명(s) : MG600Q2YS60A
Toshiba
상세내역 : TOSHIBA IGBT MODULE silicon N channel IGBT
부품명(s) : MG15J6ES40
Toshiba
상세내역 : INSULATED GATE BIPOLAR TRANSISTOR
Fairchild Semiconductor
상세내역 : EcoSPARK? 500mJ, 360V, N-channel Ignition IGBT (Rev - 2002)
부품명(s) : SGTN50A36FD N50A36
Kodenshi Auk Co., LTD
상세내역 : Insulated Gate Bipolar Transistor, IGBT
부품명(s) : RJP6085DPN RJP6085DPN-00-T2
Renesas Electronics
상세내역 : silicon N channel IGBT High Speed Power Switching
(Rev - 2010)
Fairchild Semiconductor
상세내역 : EcoSPARK? 300mJ, 360V, N-channel Ignition IGBT (Rev - 2002)
ON Semiconductor
상세내역 : EcoSPARK� 500mJ, 360V, N-channel Ignition IGBT
부품명(s) : RJK6085DPK-00-T0 RJP6085DPK
Renesas Electronics
상세내역 : silicon N channel IGBT High Speed Power Switching
(Rev - 2010)
부품명(s) : RJK6085DPK-00-T0 RJP6085DPK
Renesas Electronics
상세내역 : silicon N channel IGBT High Speed Power Switching